 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LETE -Threshold Low OBSO - N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V TN0635 TN0640 RDS(ON) (max) 10 10 ID(ON) (min) 1.0A 1.0A VGS(th) (max) 1.8V 1.8V Order Number / Package TO-92 TN0635N3 TN0640N3 Die TN0635ND TN0640ND MIL visual screening available 7 Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features Low threshold --1.8V max. High input impedance Low input capacitance -- 85pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Options SGD Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-59 BVDSS BVDGS 20V -55C to +150C 300C TO-92 Note: See Package Outline section for dimensions. TN0635/TN0640 Thermal Characteristics Package TO-92 ID (continuous)* 200mA ID (pulsed) 1.5A Power Dissipation @ TC = 25C 1.0W jc ja IDR* 200mA IDRM 1.5A C/W 125 C/W 170 LETE - OBSO - Electrical Characteristics * ID (continuous) is limited by max rated Tj. (@ 25C unless otherwise specified) Min TN0640 TN0635 400 350 0.6 -2.5 1.8 -4.0 100 10 1.0 V mV/C nA A mA A 10 10 0.75 125 350 85 30 10 130 75 20 20 15 25 20 1.8 300 V ns ns pF %/C m Typ Max Unit V Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Conditions VGS = 0V, ID = 100A VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 150mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V f = 1 MHz ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.3 1.0 1.5 1.8 8.0 7.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 7-60 VDD = 25V, ID = 1.0A, RGEN = 25 VGS = 0V, ISD = 200mA VGS = 0V, ISD = 1.0A VDD RL OUTPUT D.U.T. Typical Performance Curves Output Characteristics 2.5 LETE - OBSO - 1.25 1.00 TN0635/TN0640 Saturation Characteristics VGS = 10V 6V 4V VGS = 10V 2.0 5V ID (amperes) 4V 1.0 ID (amperes) 1.5 0.75 0.50 3V 0.5 0.25 2V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 0.5 VDS (volts) Power Dissipation vs. Case Temperature 7 VDS = 25V 1.8 0.4 TA = -55 C TA = 25 C 1.4 GFS (siemens) PD (watts) 0.3 TA = 125 C 0.2 TO-92 1.0 0.6 0.1 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TO-92 (pulsed) TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 TO-92 (DC) 0.6 TO-92 PD = 1W TC = 25 C 0.4 0.01 0.2 T C = 25C 0.001 1 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (volts) tp (seconds) 7-61 Typical Performance Curves BVDSS Variation with Temperature 1.1 LETE - OBSO - On-Resistance vs. Drain Current 15.0 12.0 TN0635/TN0640 V GS = 5V BVDSS (normalized) RDS(ON) (ohms) 9.0 1.0 VGS = 10V 6.0 3.0 0 -50 0 50 100 150 0 0 0.4 0.8 1.2 1.6 2.0 Tj ( C) Transfer Characteristics 2.5 ID (amperes) V(th) and RDS Variation with Temperature 2.0 TA = -55 C TA = 125 C 2.0 1.4 RDS(ON) @ 10V, 0.5A VGS(th) (normalized) 1.2 1.6 V (th) @ 1mA 1.2 1.5 TA = 25 C 1.0 0.8 0.8 0.4 0.6 1.0 0.5 0 0 2 4 6 8 10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj ( C) Gate Drive Dynamic Characteristics VDS = 10V 270 pF 8 150 C (picofarads) VDS = 40V VGS (volts) 6 270 pF 100 CISS 4 50 COSS CRSS 2 100 pF 0 40 0 1.0 2.0 3.0 4.0 5.0 0 0 10 20 30 VDS (volts) QG (nanocoulombs) 7-62 RDS(ON) (normalized) ID (amperes) |
Price & Availability of TN0640N3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |